Pattern forming method and apparatus for fabricating semiconductor device
US6966710B2 · kind B2 · utility
2Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 18, 2004 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | May 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.