Method of forming capacitor of semiconductor device
US6967135B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a storage node contact so that the bottom electrode is connected with the storage node contact; plasma-nitrifying the bottom electrode to form a first nitrification film on the surface of the bottom electrode; forming a La2O3 dielectric film on the bottom electrode including the first nitrification film; plasma-nitrifying the La2O3 dielectric film to form a second nitrification film on the surface of the La2O3 dielectric film; and forming a top electrode on the La2O3 dielectric film including the second nitrification film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.