Storage structure with cleaved layer
US6967149B2 · kind B2 · utility
254Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Nov 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for making a multi-layered storage structure includes forming a device layer on a single-crystal wafer, cleaving the device layer from the wafer, repeating the forming and cleaving to provide a plurality of cleaved device layers, and bonding the cleaved device layers together to form the multi-layered storage structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.