Patent · US Expired

Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials

US6967173B2 · kind B2 · utility

2Cited by
6References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2001
Grant dateNov 22, 2005
Priority date—
Expiry dateOct 11, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76838
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.