Semiconductor light emitting device and fabrication method thereof
US6967353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.