Nitride semiconductor substrate production method thereof and semiconductor optical device using the same
US6967359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2002 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Sep 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AlN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AlN molar fraction is grown through a second group-III nitride semiconductor, such as AlN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.