Surface emission semiconductor laser device
US6967985B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Jan 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.