Multiple exposure technique to pattern tight contact geometries
US6968532B2 · kind B2 · utility
27Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Oct 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask pattern may be decomposed into two or more masks, each having a pitch greater than that of the original mask pattern. New, “partial-pattern” masks may be created for each of the new mask patterns. The original mask pattern is transferred to the photoresist for the corresponding layer using a multiple exposure technique in which the photoresist is exposed with each of the partial-pattern masks individually, e.g., back-to-back in a pass through a scanner, to define all of the features in the original pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.