Methods for reducing the curvature in boron-doped silicon micromachined structures

US6969425B2 · kind B2 · utility

Assignee

• HONEYWELL INTERNATIONAL INC. · US

Inventors

• Cleopatra Cabuz · Edina, US
• Max C. Glenn · Shorewood, US
• Francis M. Erdmann · Maple Grove, US
• Robert D. Horning · Savage, US

Key dates

• Filing date: Jan 17, 2003
• Grant date: Nov 29, 2005
• Expiry date: May 23, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/2495
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.