Method for forming a metallization structure in an integrated circuit
US6969448B1 · kind B1 · utility
45Cited by
24References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.