Wet etchant composition and method for etching HfO2 and ZrO2
US6969688B2 · kind B2 · utility
1Cited by
4References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 8, 2002 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | May 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.