Method of manufacturing an oxide-nitride-oxide (ONO) dielectric for SONOS-type devices
US6969689B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Nov 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming oxide-nitride-oxide (ONO) dielectric of a SONOS-type nonvolatile storage device is disclosed. According to a first embodiment, a method may include the steps of forming a tunneling dielectric (step 102), forming a charge storing dielectric (step 104), and forming a top insulating layer (step 106) all in the same wafer processing tool. According to various aspects of the embodiments, all layers of an ONO dielectric of a SONOS-type device may be formed in the same general temperature range. Further, a tunneling dielectric may include a tunnel oxide formed with a long, low pressure oxidation, and a top insulating layer may include silicon dioxide formed with a preheated source gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.