Programmable resistance memory element with indirect heating
US6969869B2 · kind B2 · utility
12Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2003 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Sep 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.