Thin film semiconductor device
US6969871B2 · kind B2 · utility
3Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2003 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.