Semiconductor diode capable of detecting hydrogen at high temperatures
US6969900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2004 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Mar 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.