Inventor · Baoshan, TW

Chun-Tsen Lu

26Patents
3h-index
63Co-inventors
62Inventor score

Filing activity: Mar 10, 2004 → Mar 7, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9379242B1 Method of fabricating fin field effect transistor Electricity 9 Active
US10043807B1 Semiconductor device and method of forming the same Electricity 4 Active
US9887158B1 Conductive structure having an entrenched high resistive layer Electricity 4 Active
US10043718B1 Method of fabricating semiconductor device Electricity 3 Active
US9966263B1 Method of fabricating fin structure Electricity 2 Active
US9502303B2 Method for manufacturing semiconductor device with a barrier layer having overhung portions Electricity 2 Active
US9735015B1 Fabricating method of semiconductor structure Electricity 2 Active
US10153210B1 Semiconductor device and method for fabricating the same Electricity 2 Active
US11631753B2 Semiconductor device and method for fabricating the same Electricity 2 Active
US10475744B2 Vertical gate-all-around transistor and manufacturing method thereof Electricity 2 Active
US10446448B2 Semiconductor device and method for fabricating the same Electricity 1 Active
US9466484B1 Manufacturing method of semiconductor device Electricity 1 Active
US9443726B1 Semiconductor process Electricity 1 Active
US10290723B2 Semiconductor device with metal gate Electricity 0 Active
US11004897B2 Magnetoresistive random access memory and method for fabricating the same Electricity 0 Active
US9443952B2 Method of forming semiconductor device Electricity 0 Active
US10008581B2 Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion Electricity 0 Active
US10403715B2 Semiconductor device Electricity 0 Active
US12127413B2 Magnetoresistive random access memory and method for fabricating the same Electricity 0 Active
US10204986B1 Semiconductor device and manufacturing method thereof Electricity 0 Active
US6969900B2 Semiconductor diode capable of detecting hydrogen at high temperatures Physics 0 Expired
US11621296B2 Magnetoresistive random access memory and method for fabricating the same Electricity 0 Active
US10192826B2 Conductive layout structure including high resistive layer Electricity 0 Active
US11145733B1 Method of manufacturing a semiconductor device Electricity 0 Active
US12009409B2 Semiconductor device and method for fabricating the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.