Patent · US Expired

Method and apparatus for measuring thin film, and thin film deposition system

US6970532B2 · kind B2 · utility

10Cited by
7References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 9, 2001
Grant dateNov 29, 2005
Priority date
Expiry dateJul 7, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01B15/02
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin film deposition sample substrate for allowing a thin film substance flowing in from the thin film deposition furnace to adhere while X-ray incidence and extraction windows being provided on the side walls of the measuring unit, wherein X-ray is irradiated on the thin film deposition sample substrate in the measuring unit through the X-ray incidence window by means of a thin film measuring unit provided at the outside of the thin film deposition furnace, and the X-ray reflected from the thin film deposition sample substrate is sensed through the X-ray extraction window.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.