Multi-step polishing solution for chemical mechanical planarization
US6971945B2 · kind B2 · utility
9Cited by
11References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 23, 2004 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Apr 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.