Fabrication of semiconductor dies with micro-pins and structures produced therewith
US6972243B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor die, comprising forming a trench in a surface of the die; filing the trench with a sacrificial material; patterning the die to form a series of channels extending substantially perpendicularly to the trench; depositing a conductive material in the channels; removing at least a portion of the sacrificial material; and removing portions of the die under the trench so as to separate a portion of the die on one side of the trench from a portion on another side of the trench. The sacrificial material may be patterned so that the channels extend so as to be partially in a portion of the die and partially a portion of the sacrificial material. A series of structures are formed having dies with micro-pins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.