Silicon germanium heterojunction bipolar transistor with step-up carbon profile
US6972441B2 · kind B2 · utility
2Cited by
5References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.