M. Shaheed
3Patents
2h-index
3Co-inventors
30Inventor score
Filing activity: Nov 27, 2002 → Dec 27, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6870179B2 | Increasing stress-enhanced drive current in a MOS transistor | Electricity | 32 | Expired |
| US7338847B2 | Methods of manufacturing a stressed MOS transistor structure | Electricity | 5 | Expired |
| US6972441B2 | Silicon germanium heterojunction bipolar transistor with step-up carbon profile | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.