Trench capacitor in a substrate with two floating electrodes independent from the substrate
US6972451B2 · kind B2 · utility
15Cited by
6References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2003 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | May 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor formed in a substrate including a recess dug into a substrate; a first layer of a dielectric material covering the walls, the bottom and the edges of the recess; a second layer of a conductive material covering the first layer; a third layer of a conductive or insulating material filling the recess; trenches crossing the third layer; a fourth layer of a conductive material covering the walls, the bottoms as well as the intervals between these trenches and the edges thereof; a fifth layer of a dielectric material covering the fourth layer; and a sixth layer of a conductive material covering the fifth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.