Patent · US Expired

Imaging cell that has a long integration period and method of operating the imaging cell

US6972457B1 · kind B1 · utility

6Cited by
31References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 9, 2004
Grant dateDec 6, 2005
Priority date
Expiry dateApr 9, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/803

Abstract

The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.