Channel MOSFET with strained silicon channel on strained SiGe

US6972461B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Xiangdong Chen · Irvine, US
• Dureseti Chidambarrao · Weston, US
• Geng Wang · Stormville, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Jun 30, 2004
• Grant date: Dec 6, 2005
• Expiry date: Jun 30, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/933

Abstract

A structure for use as a MOSFET employs an SOI wafer with a SiGe island resting on the SOI layer and extending between two blocks that serve as source and drain; epitaxially grown Si on the vertical surfaces of the SiGe forms the transistor channel. The lattice structure of the SiGe is arranged such that the epitaxial Si has little or no strain in the direction between the S and D and a significant strain perpendicular to that direction.