Lateral PIN diode and method for processing same

US6972469B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Raimund Peichl · Höhenkirchen-Siegertsbrunn, DE
• Philipp Seng · Munich, DE

Key dates

• Filing date: Dec 8, 2003
• Grant date: Dec 6, 2005
• Expiry date: Dec 8, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of the n-area. Further, the PIN diode includes a first electrically conductive member, which is arranged on a side of the p-area, which faces away from the intermediate area, and a second electrically conductive member, which is arranged on a side of the n-area, which faces away from the intermediate area. The PIN diode is preferably separated from the substrate by an insulating layer, covered by a further insulating layer on the surface, which faces away from the substrate, and laterally surrounded by a trench filled with an insulating material, such that it is essentially fully insulated and encapsulated.