Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6972852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2004 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Oct 26, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.