Semiconductor memory device capable of switching between an asynchronous normal mode and a synchronous mode and method thereof
US6973009B2 · kind B2 · utility
6Cited by
28References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2004 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Dec 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a memory cell array, a control section and a latency setting circuit. The control section configured to receive a clock signal and a control signal, and configured to output a plurality of data in synchronism with the clock signal after the control signal is asserted. The latency setting circuit configured to set the latency N, and the latency setting circuit including at least one switch which fixes the latency by use of an externally supplied signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.