Adhesion of carbon doped oxides by silanization
US6974762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2002 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of silanizing the surface of a low-k interlayer dielectric oxides (carbon doped oxides or organo-silicate glasses) to improve surface adhesion to adjacent thin film layers in damascene integration of microelectronic devices. A low-k interlayer dielectric oxide may be exposed to the vapor of a silane-coupling agent in order to modify its surface energy to improve adhesion with adjacent thin film layers. A low-k interlayer dielectric oxide can also be silanized by dipping the low-k interlayer dielectric oxide in a solution of silane-coupling agent. The silane-coupling agent will cause covalent bonds between the low-k interlayer dielectric oxide and the adjacent thin film thereby improving adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.