Vijayakumar Ramachandrarao
24Patents
8h-index
20Co-inventors
67Inventor score
Filing activity: Jun 10, 2002 → Jan 23, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6812132B2 | Filling small dimension vias using supercritical carbon dioxide | Electricity | 38 | Expired |
| US7005390B2 | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7238604B2 | Forming thin hard mask over air gap or porous dielectric | Electricity | 32 | Expired |
| US7374867B2 | Enhancing photoresist performance using electric fields | Physics | 19 | Expired |
| US7022655B2 | Highly polar cleans for removal of residues from semiconductor structures | Chemistry; Metallurgy | 10 | Expired |
| US8080475B2 | Removal chemistry for selectively etching metal hard mask | Electricity | 9 | Active |
| US6624127B1 | Highly polar cleans for removal of residues from semiconductor structures | Chemistry; Metallurgy | 9 | Expired |
| US6974762B2 | Adhesion of carbon doped oxides by silanization | Electricity | 9 | Expired |
| US7179757B2 | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7335586B2 | Sealing porous dielectric material using plasma-induced surface polymerization | Electricity | 7 | Active |
| US7605073B2 | Sealants for metal interconnect protection in microelectronic devices having air gap interconnect structures | Electricity | 7 | Active |
| US6620741B1 | Method for controlling etch bias of carbon doped oxide films | Electricity | 6 | Expired |
| US7220668B2 | Method of patterning a porous dielectric material | Electricity | 6 | Expired |
| US7977228B2 | Methods for the formation of interconnects separated by air gaps | Electricity | 4 | Active |
| US7214605B2 | Deposition of diffusion barrier | Electricity | 2 | Expired |
| US7303648B2 | Via etch process | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7049053B2 | Supercritical carbon dioxide to reduce line edge roughness | Physics | 1 | Expired |
| US7038324B2 | Wafer stacking using interconnect structures of substantially uniform height | Electricity | 1 | Expired |
| US7233068B2 | Filling small dimension vias using supercritical carbon dioxide | Electricity | 1 | Expired |
| US7422020B2 | Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric | Chemistry; Metallurgy | 0 | Active |
| US7101443B2 | Supercritical carbon dioxide-based cleaning of metal lines | Chemistry; Metallurgy | 0 | Expired |
| US8017568B2 | Cleaning residues from semiconductor structures | Chemistry; Metallurgy | 0 | Active |
| US7268015B2 | Method for wafer stacking using copper structures of substantially uniform height | Electricity | 0 | Expired |
| US7018938B2 | Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.