Interfacial oxidation process for high-k gate dielectric process integration
US6974779B2 · kind B2 · utility
9Cited by
6References
33Claims
0Family size
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Key dates
| Filing date | Sep 16, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.