Active pixel cell using negative to positive voltage swing transfer transistor
US6974943B2 · kind B2 · utility
7Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | May 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.