Semiconductor device and method of manufacturing the same
US6974999B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
Abstract
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard mask. A gate electrode (3) is formed by etching using a hard mask as a mask and the hard mask remains on an upper surface of the gate electrode (3) at a subsequent step. In the meantime, the upper surface of the gate electrode (3) can be therefore prevented from being unnecessarily etched. The hard mask is removed after ion implantation for forming a source-drain region. Consequently, the influence of the removal of the hard mask on a characteristic of a semiconductor device can be suppressed. In that case, moreover, a surface of a side wall (4) is also etched by a thickness of (d) so that an exposure width of an upper surface of the source-drain region is increased. After the removal of the hard mask, it is easy to salicide the gate electrode (3) and to form a contact on the gate electrode (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.