Apparatus for pulling single crystal by CZ method
US6977010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Nov 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.