MTJ stack with crystallization inhibiting layer
US6977181B1 · kind B1 · utility
113Cited by
6References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Jun 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than the crystallization temperature of the free layer material. The crystallization inhibiting layer inhibits the crystallization of the underlying free layer, providing improved thermal stability for the resistive memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.