Inventor · Sauerlach, DE

Wolfgang Raberg

66Patents
8h-index
59Co-inventors
81Inventor score

Filing activity: Jan 15, 2002 → Oct 11, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6977181B1 MTJ stack with crystallization inhibiting layer Electricity 113 Expired
US6985384B2 Spacer integration scheme in MRAM technology Electricity 34 Expired
US7149105B2 Magnetic tunnel junctions for MRAM devices Physics 31 Expired
US7211446B2 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory Electricity 22 Expired
US6638774B2 Method of making resistive memory elements with reduced roughness Physics 10 Expired
US7423282B2 Memory structure and method of manufacture Electricity 9 Active
US6567300B1 Narrow contact design for magnetic random access memory (MRAM) arrays Emerging Cross-Sectional Technologies 9 Expired
US10109367B2 Magnetic memory device and method for operating the same Physics 9 Active
US7344896B2 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof Electricity 8 Expired
US8063633B2 Magnetoresistive magnetic field sensor structure Emerging Cross-Sectional Technologies 7 Active
US7602032B2 Memory having cap structure for magnetoresistive junction and method for structuring the same Electricity 4 Active
US10324144B2 Lateral transmission of signals across a galvanic isolation barrier Electricity 4 Active
US9411024B2 Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy Physics 3 Active
US11467188B2 Current sensor for improved functional safety Physics 2 Active
US8105445B2 Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks Emerging Cross-Sectional Technologies 2 Active
US9620707B2 Magnetoresistive devices and methods for manufacturing magnetoresistive devices Electricity 2 Active
US11506732B2 XMR sensors with serial segment strip configurations Physics 1 Active
US10852369B2 Stray field robust xMR sensor using perpendicular anisotropy Electricity 1 Active
US7316933B2 Method for producing an annular microstructure element Electricity 1 Expired
US7408803B2 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method Physics 1 Expired
US10989769B2 Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern Physics 1 Active
US7851875B2 MEMS devices and methods of manufacture thereof Emerging Cross-Sectional Technologies 1 Active
US11467232B2 Magnetoresistive sensor and fabrication method for a magnetoresistive sensor Electricity 1 Active
US8198690B2 MEMS devices and methods of manufacture thereof Emerging Cross-Sectional Technologies 1 Active
US7473656B2 Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks Emerging Cross-Sectional Technologies 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.