Method for manufacturing semiconductor laser optical device
US6977186B2 · kind B2 · utility
3Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Mar 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III–V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.