Test structure for characterizing junction leakage current
US6977195B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2004 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Aug 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For characterizing bulk leakage current of a junction, a center junction surrounded by an isolation structure is formed with a first depth. In addition, at least one periphery junction having a second depth greater than the first depth is formed in a portion of the center junction adjacent the isolation structure. A junction silicide is formed with the center and periphery junctions. The magnitude of a reverse-bias voltage across the junction silicide and the P-well is incremented for determining a critical magnitude of the reverse-bias when current through the junction silicide and the P-well reaches a threshold current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.