Method of electroless introduction of interconnect structures
US6977224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Sep 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.