Semiconductor laser array device employing modulation doped quantum well structures
US6977954B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 2003 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Nov 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The array of multi-wavelength thyristor devices may be used to realize devices that provide a variety of optoelectronic functions, such …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.