Contact structure and method of making the same
US6979640B1 · kind B1 · utility
1Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor structure comprises forming a hole through a first dielectric layer; followed by forming a hole through an etch-stop layer, to expose a first conducting layer. The thickness of the etch-stop layer is at least one-half the smallest line width of the first conducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.