Method of self-annealing conductive lines that separates grain size effects from alloy mobility
US6979642B1 · kind B1 · utility
6Cited by
11References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive structure such as a copper conductive structure, line, or via is optimized for large grain growth and distribution of alloy elements. The alloy elements can reduce electromigration problems associated with the conductive structure. The conductive structure is self-annealed or first annealed in a low temperature process over a longer period of time. Another anneal is utilized to distribute alloy elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.