Method for BARC over-etch time adjust with real-time process feedback
US6979648B2 · kind B2 · utility
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Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Jul 27, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.