James B. Friedmann
7Patents
3h-index
27Co-inventors
49Inventor score
Filing activity: Jan 11, 1999 → Jul 7, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6362111B1 | Tunable gate linewidth reduction process | Electricity | 59 | Expired |
| US6228741A | Method for trench isolation of semiconductor devices | Electricity | 4 | Expired |
| US6686283B1 | Shallow trench isolation planarization using self aligned isotropic etch | Electricity | 4 | Expired |
| US7250372B2 | Method for BARC over-etch time adjust with real-time process feedback | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7887875B2 | Method to reduce photoresist poisoning | Physics | 0 | Expired |
| US6979648B2 | Method for BARC over-etch time adjust with real-time process feedback | Emerging Cross-Sectional Technologies | 0 | Expired |
| US7153711B2 | Method for improving a drive current for semiconductor devices on a wafer-by-wafer basis | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.