Silicon fixture supporting silicon wafers during high temperature processing
US6979659B2 · kind B2 · utility
8Cited by
16References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2004 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Apr 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for hydrogen annealing silicon wafers that have been cut from an ingot and polished on both sides, thereby removing crystal originated pits (COPs) in their surface. The wafers are then stacked in a tower having at least support surfaces made from virgin polysilicon, that is, polysilicon form by chemical vapor deposition, preferably from monosilane. The tower may include four virgin polysilicon legs have support teeth slotted at inclined angles along the legs and fixed at their opposed ends to bases. The wafers so supported on the virgin polysilicon towers are annealed in a hydrogen ambient at 1250° C. for 12 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.