Thyristor-based device having a reduced-resistance contact to a buried emitter region
US6980457B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2002 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Jun 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of the thyristor that is at least partially below an upper surface of the substrate. According to an example embodiment of the present invention, a conductor, such as a polysilicon pillar formed in a trench, extends through the substrate and to the buried emitter region of the thyristor. In one implementation, a portion of the conductor includes a reduced-resistance material, such as a salicide, that is adapted to reduce the resistance of an electrical connection made to the buried emitter region via the conductor. This is particularly useful, for example, in connecting the buried emitter region to a power supply at a reduced resistance (e.g., as compared to the resistance that would be exhibited, were the reduced-resistance material not present).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.