Mechanism for improving the structural integrity of low-k films
US6982206B1 · kind B1 · utility
13Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Dec 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.