Semiconductor device and method of manufacturing the same
US6982467B2 · kind B2 · utility
1Cited by
0References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.