Tsunehiro Ino
43Patents
6h-index
33Co-inventors
65Inventor score
Filing activity: Feb 6, 2004 → Jun 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10096619B2 | Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer | Electricity | 12 | Active |
| US7608849B2 | Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements | Emerging Cross-Sectional Technologies | 12 | Active |
| US7875925B2 | Nonvolatile semiconductor memory device | Electricity | 11 | Active |
| US8866139B2 | Nonvolatile semiconductor memory device | Emerging Cross-Sectional Technologies | 11 | Active |
| US7655971B2 | Nonvolatile semiconductor memory device and method for manufacturing the same | Electricity | 8 | Active |
| US9779797B2 | Non-volatile memory device | Electricity | 8 | Active |
| US10403815B2 | Semiconductor device and dielectric film | Electricity | 6 | Active |
| US8012315B2 | Lanthanoid aluminate film fabrication method | Chemistry; Metallurgy | 6 | Active |
| US7821059B2 | Semiconductor device and method for manufacturing a semiconductor device | Electricity | 5 | Active |
| US8569823B2 | Semiconductor device and manufacturing method thereof | Electricity | 5 | Active |
| US7498643B2 | Semiconductor device and method for manufacturing the same | Electricity | 4 | Active |
| US10636468B2 | Semiconductor memory device | Electricity | 4 | Active |
| US7075158B2 | Semiconductor device and method of manufacturing the same | Electricity | 3 | Expired |
| US9634248B2 | Insulator and memory device | Electricity | 3 | Active |
| US9691973B2 | Semiconductor device and dielectric film including a fluorite-type crystal | Electricity | 3 | Active |
| US10923500B2 | Memory device | Electricity | 3 | Active |
| US10510862B2 | Semiconductor memory device | Electricity | 2 | Active |
| US8390054B2 | Semiconductor memory element and semiconductor memory device | Electricity | 2 | Active |
| US7053455B2 | Semiconductor device and method of manufacturing semiconductor device | Electricity | 2 | Expired |
| US7629243B2 | Method for manufacturing semiconductor device | Electricity | 1 | Active |
| US9768265B1 | Semiconductor memory device | Electricity | 1 | Active |
| US6982467B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Expired |
| US9935122B2 | Nonvolatile semiconductor memory device having electron scattering and electron accumulation capacities in charge accumulation layer | Electricity | 1 | Active |
| US7943981B2 | Semiconductor memory element | Electricity | 1 | Active |
| US7956405B2 | Semiconductor storage element and manufacturing method thereof | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.