Fabrication process for a magnetic tunnel junction device
US6984529B2 · kind B2 · utility
83Cited by
9References
29Claims
0Family size
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Key dates
| Filing date | Sep 10, 2003 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.