Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
US6984552B2 · kind B2 · utility
3Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | Dec 7, 2001 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Dec 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.